Iiiv compounds have band structures of the same type as the group iv semiconductors though there are some differences which arise from the lack of inversion symmetry in the compounds. Gallium antimonide is a crystal grown gallium source used to produce sputtering targets and deposition sources and as a starting material for various semiconductor and photo optic materials. Osa indium antimonide uncooled photodetector with dual band. Band structure and carrier concentration of indium antimonide insb band structure and carrier concentration basic parameters temperature dependences dependence of the energy gap on hydrostatic pressure effective masses donors and acceptors basic parameters. The strategic purpose for introducing nws is the possibility for physical incorporation and the choice of different nw combination systems as the limitations of lattice similarity are minimized. The layer structure and calculated band structure for a. As a member of the iiiv compound semiconductors family, the growth of ultrathin films of indium antimonide has attracted a great deal of attention for its use in midwavelength infrared detectors viz. Bismuth antimonides, bismuthantimonys, or bismuthantimony alloys, bi 1. Semiconducting iiiv compounds, volume 1 1st edition. Indium phosphide nanocrystalline surface obtained by electrochemical etching and viewed under scanning electron microscope. Indium antimonide detectors indium antimonide short form catalog in pdf format j10d series indium antimonide detectors.
In chemistry, the formula weight is a quantity computed by multiplying the atomic weight in atomic mass units of each element in a chemical formula by the number of atoms of that element present in the formula, then adding all of these products together. However, because of materials small band gap and low melting point, reproducibility of high quality epitaxial insb is difficult to obtain. Their data indicate a highly temperaturedependent edge band structure of indium antimonide which extrapolates to a value eg 023 ev at t tk. Band structure and carrier concentration of indium. Indium phosphide inp is a binary semiconductor composed of indium and phosphorus. Ep1912260b1 a quantum dot thermistor structure and use. Molecular beam epitaxial growth of indium antimonide and. More information on molar mass and molecular weight. The aim of present study is to fabricate ntype indium antimonide thin films, therefore.
Properties of indiumarsenide measured by low temperature. Osa electronic band structures and optical properties of. The band structure of insb is calculated using the k. This article reports growth experimentations for determining suitable conditions for growing insb on insb100 substrate using solid source. Experiments show tlat the minimum of the conduction banl in insb lies at the centre. Indium antimonide definition of indium antimonide by. Band structure and carrier concentration basic parameters of band structure and carrier concentration temperature dependences energy gap narrowing at high doping. It has a facecentered cubic zincblende crystal structure, identical to that of gaas and most of the iiiv semiconductors. The thin band gap for indium antimonide alloy characteristics from the said materials is very attractive for optoelectronic device applications. Electrical and optical characterization of electron beam. Indium antimonide definition is a synthetic compound insb of indium and antimony that is a semiconducting and photosensitive material and is used especially in infrared photodetectors. The small band gap requires an accurate treatment of conduction and valence band interactions while higher bands are treated by perturbation theory.
Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed. Indium antimonide insb is a crystalline semiconductor made of antimony and indium. Pdf magnetotransport of indium antimonide doped with. It is established that taking into account the effect of spinorbit interaction results also in a substantial change in the dispersion of the obtained bands instead of only in the doublet splitting of the band of core d levels at. Two papers from the group detail the implementation of a staircase structure min ren et al, appl. Band structure and carrier concentration of indium antimonide. Rubidium indium antimonide, rb2in2sb3 article pdf available in acta crystallographica section c crystal structure communications 5212. Conductance through a helical state in an indium antimonide. Effect of spinorbit interaction on the electronic structure. Insb is widely used for the creation of discrete and.
Study of structural property of ntype indium antimonide. Under an applied bias of 5 ma, the uncooled blackbody responsivity and specific detectivity are 3. Antimonidebased compound semiconductors for electronic devices. Antimonide compounds or stibnides contain the element antimony. Optical characterization of electron beam evaporated indium. Interconsistent band structure of narrowgap hg1xcdxte. Antimonide definition of antimonide by merriamwebster. Numerical simulation of the transport properties of indium antimonide. It is highly flammable due to its tendency to form sb 3 ion. Design and fabrication of a midinfrared photonic crystal. Other materials are aluminum, indium 3valent and arsenic, antimony 5valent. Indium antimonide insb handbook series on semiconductor.
Indium gallium arsenide antimonide photodetector grown by. For the model employing fermidirac statistics and the kane. Numerical solutions of a field effect model for indium. The bands and densities of states of d bands in indium antimonide insb are determined taking into account and disregarding the spinorbit interaction. Thermally tunable terahertz metasurface absorber based on. It can be alloyed with other iiiv semiconductor materials to produce aluminium arsenic antimonide, aluminum gallium antimonide and aluminum indium antimonide. In this paper, we proposed and demonstrated a thermally tunable msa based on an indium antimonide insb dielectric resonator structure in thz region. The number of electrons in each of indium s shells is 2, 8, 18, 18, 3 and its electron configuration is kr 4d 10 5s 2 5p 1. The locations of the band gap, the conduction and valence bands are shown for the case of a four electron per atom system it is clear from the figure 2 that the. The change of band structure and increased carrier. Aluminium antimonide simple english wikipedia, the free.
Simulation results and fabrication details are presented for a twodimensional photonic crystal membrane defect cavity for use as a laser in gas sensing and communications applica. Antimonidebased compound semiconductors for electronic. The undoped and doped with indium or copper crystals with x 0. Band structure and carrier concentration of insb 300 k e g 0.
Indium antimonide is a narrow bandgap semiconductor with a very high electron mobility making it a good candidate for use in ir detectors. We supply a variety of standard and custom insb detectors, including quadrants and multielement arrays from 2 to 128 pixels. Growth and characterization of indium antimonide and. Solutions of a model using boltzman statistics are compared with those using fermidirac statistics. Electrical and optical properties of indium antimonide. Hydrostatic pressure effect on the electrical conductivity. It belongs to the iiiv group and is a narrow gap semiconductor. It belongs to the iiiv group and is a narrow gap semiconductor material. Allinsb filmbased and spiral antennaassisted auinsbau metalsemiconductormetal detector is reported with dualband photoresponse in the infrared ir and millimeter wave range. Faraday rotation, absorption spectra, and the intrinsic carrier concentration temperature dependencies were investigated in order to determine the interconsistent system of values of the narrowgap hg 1x cd x te band parameters. Indium antimonide wafers inas epitaxy ready polished wafers single crystals are grown in a pure fused silica system by the czochralski method from multiple zone refined polycrystalline ingot. Elements with 3 valence electrons are used for ptype doping, 5valued elements for ndoping. Electrical and optical properties of indium antimonide doped. Growth and characterization of indium antimonide and gallium.
Antimonide definition is a binary compound of antimony with a more electropositive element. Indium arsenide detectors indium arsenide short form catalog in pdf format j12 series detectors are highquality indium arsenide photodiodes for use in the 1 to 3. Temperature dependences temperature dependence of the energy gap e g 0. Noise and aluminium indium arsenide antimonide avalanche. Infrared absorption and valence band in indium antimonide. Direct band gap has been determined using these spectra. Indium antimonide is supplied in polished wafer form. Indium antimonide is minor metal compound semiconductor of crystal structure gasb, which is available in powder, piece, ingot, granule, wafer and nanowire.
Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Aluminium antimonide is a semiconductor of the group iiiv family. Molecular weight of indium antimonide convert units. Device structure was fabricated using a process that includes. Allinsb filmbased and spiral antennaassisted auinsbau metalsemiconductormetal detector is reported with dual band photoresponse in the infrared ir and millimeter wave range. Detectors made of indium antimonide are sensitive and lie between a wavelength of 1 and 5 m. Band discontinuities at gainassb gasb and gainassb inas heterojunctions. Effective density of states in the conduction band n c 810 12. Indiumiii antimonide article about indiumiii antimonide. Pdf ab initio calculation of the thermal conductivity of. Ab initio calculation of the thermal conductivity of indium antimonide. We formulate a rigorous band structure model using the 8band k p method to include the conduction and valence band mixing. The unitcell of the msa consists of periodic array of insb star shaped structure adhered on a continuous gold film.
Indium antimonide article about indium antimonide by the. It has aluminium and arsenide ions in it properties and preparation. Magnetotransport of indium antimonide doped with manganese. The growth method of insb monocrystal is same to gasb. Study of structural property of ntype indium antimonide thin. In the present work indium antimonide crystals doped by cadmium and tellurium in equiatomic quantities have been studied. Pdf numerical simulation of the transport properties of. Ultrafast photodetectors based on highmobility indium gallium antimonide nanowires. Review antimonide based compound semiconductors for electronic devices. Ingaassb quaternary alloys with a bandgap energy of about 653 mev were grown using the liquid phase epitaxy technique on top of 100 gasb substrates. Compounds like it, such as gallium antimonide and indium antimonide can be made into leds and detectors for infrared radiation but aluminium antimonide doesnt work as well. It is a narrowgap semiconductor material from the iiiv group used in infrared detectors, including thermal imaging cameras, flir systems, infrared homing missile guidance systems, and in infrared astronomy.
It is used instead to make the other compounds work better by stopping defects forming as they are made. The universities of virginia and of texas in the usa have been developing avalanche photodiodes apds based on aluminium indium arsenide antimonide alinassb alloys. Electrical, optical and structural properties of indium. Hydrostatic pressure effect on the electrical conductivity of indium antimonide by lam, hing yee. Aluminium arsenide simple english wikipedia, the free. Pdf investigation of electrooptical properties of insb under the. Numerical solutions of a field effect model for indium antimonide are presented.
At ir, the detector exhibits a long wavelength 100% cutoff at 7. Pdf photoreflectance of indium antimonide researchgate. Indium antimonide insb appears in the form of dark grey. A similar comparison of results is made between models employing a parabolic conduction band and nonparabolic band as described by kane. Us3099776a us35311a us3531160a us3099776a us 3099776 a us3099776 a us 3099776a us 35311 a us35311 a us 35311a us 3531160 a us3531160 a us 3531160a us 3099776 a us3099776 a us 3099776a authority us united states prior art keywords type transistor indium region wafer prior art date 19600610 legal status the legal status is an assumption and is not a legal conclusion. Band structure and carrier concentration basic parameters of band structure and carrier concentration temperature dependences energy gap narrowing at high doping levels effective masses and density of states donors and acceptors electrical properties basic parameters of electrical properties. The electronic band structures and optical properties of typeii superlattice t2sl photodetectors in the midinfrared ir range are investigated. The conduction band structure varies considerably from compound to compound. The dopant is integrated into the lattice structure of the semiconductor crystal, the number of outer electrons define the type of doping.
Band profile cb and vb of the proposed insb qwfet at 300 k. Ultrafast photodetectors based on highmobility indium. J10d series detectors are high quality indium antimonide insbphotodiodes, providing excellent performance in the 1 to 5. The dashed line points to the pinchoff voltage v p. The analysis of data of measuring was made with account of the far band influence. All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability. Indium antimonide insb is a promising material for mid and longwavelength infrared device applications. The equivalent circuit is a photongenerated current source iph with parallel capacitance cd, shunt resistance rd, and series resistance rs fig. Ancona electronics science and technology division, naval research laboratory, washington, dc 203755347, usa. Magnetothermal conductivity of indium antimonide by.
Indium antimonide insb is a crystalline compound made from the elements indium in and antimony sb. Indium antimonide insb has the smallest band gap of any of the iiiv semiconductors eo. Estimates of band structure constants the best determination of the band gap, eg, appears to be the fundamental opticalabsorption edge data of roberts and quarrington. Indium antimonide uncooled photodetector with dual band. It was shown that insb 1x cdte x solid solutions with the mole concentration x.
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